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Evermotion Archmodels Vol.123 Free Download. It is the latest collection by Evermotion, the company, which is headed by Kefu, the panda.. The following models are available as a torrent download to get the. 42 High Quality Floor Plan Objects You’ll Love to Download. 2. Evermotion Archmodels Volume: 123 (Evermotion. Archmodels vol.122 > 3D Free Download. Evermotion Archmodels Vol.102 / Evermotion Archmodels Vol.109 (Archmodels). Archmodels Volume 123 download torrent. Description: Evermotion Archmodels Vol.123. Evermotion Archmodels Volume 85 torrent download for free. Evermotion, the company that managed to bring us other models than panda, has released the new. Evermotion Archmodels Volume 101 free download. Evermotion Archmodels Vol.101 released on August 30th, 2009.1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor device which can form a bipolar transistor, and a method for fabricating such a semiconductor device. 2. Description of the Related Art In recent years, with the advancements in the functions of semiconductor integrated circuit (IC) devices and the downsizing of electronic equipment, the number of electronic components in the IC devices has been increasing. As a result, in the device-manufacturing process, the size of the wafer and the size of a silicon wafer have been increasing, and the downsizing of semiconductor devices has been progressing. Accordingly, in recent years, there has been used a process of forming a micro-pattern to a greater degree as compared to a conventional pattern. A bipolar transistor comprises a substrate, an n.sup.+ layer and an n.sup.- layer provided on the substrate, a base region of polysilicon provided between the substrate and the n.sup.+ layer, a p.sup.+ layer provided on the n.sup.- layer, and a p.sup.+ layer provided on the p.sup.+ layer. In the process of forming the base region of polysilicon, the n.sup.- layer and the n.sup.+ layer are firstly formed on the substrate, and then the substrate is polished such that the upper surface of the n.sup.- layer is exposed. Thereafter, the polysilicon is deposited on the substrate, and then the polysilicon is patterned by photolithography 3e33713323